Infineon FS150R12KT3 IGBT Silicon Modules

Parameter:

Manufacturer:Infineon
Product Category:IGBT Modules
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.15 V
Continuous Collector Current at 25 C:200 A
Gate-Emitter Leakage Current:400 nA
Pd - Power Dissipation:700 W
Package / Case:Econo 3
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 125 C
Packaging:Tray
Height:17 mm
Length:122 mm
Width:62 mm
Brand:Infineon Technologies
Mounting Style:Screw Mount
Maximum Gate Emitter Voltage:+/- 20 V
Product Type:IGBT Modules
Subcategory:IGBTs
Part # Aliases:FS150R12KT3BOSA1 SP000100440